| PART |
Description |
Maker |
| MUX08EP MUX08FP |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected) 8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16
|
Analog Devices, Inc.
|
| NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143
From old datasheet system
|
NEC Electron Devices
|
| FF100R06KF |
TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 100A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 600V的五（巴西）国际消费电子展| 100号A一（c）|米：HL080HD5.3
|
Infineon Technologies AG
|
| ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 16A条一（c）| TO - 220AB现有
|
Microsemi, Corp.
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| MUX-08 MUX08BQ MUX08AQ MUX08EQ MUX08FPZ MUX08FQ |
8-Chan JFET Analog Multiplexers
|
Analog Devices
|
| IC-MB3TSSOP24 IC-MB3EVALMB3D-P IC-MB3EVALMB3D-S |
BiSS INTERFACE MASTER, 1-Chan./3-Slaves
|
IC-Haus GmbH
|
| DF100R12KF-A FD150R12KF-K |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 100A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 100A一（c）|米：HL093HW048
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 150A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 150A一（c）|米：HL093HW048
|
Atmel, Corp.
Air Cost Control
|
| IRGC100B120UB |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展|芯片
|
Belden, Inc.
|
| IXLK35N120AU1 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 58A I(C) | TO-264AA 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 58A条一（c）|64AA
|
IXYS, Corp.
|
